I-Junda Silicon Carbide Grit yimithombo yokuqhuma enzima kunazo zonke etholakala. Lo mkhiqizo osezingeni eliphakeme wenziwa ku-blocky, ukwakheka okusanhlamvu okusanhlamvu. Le midiya izokwephula ngokuqhubekayo okubangelwa yimiphetho ebukhali, yokusika. Ubulukhuni be-Silicon Carbide Grit buvumela ukushaya ama-blast amafushane ahlobene nama-medias athambile.
Ngenxa yezakhiwo zayo zamakhemikhali ezizinzile, ukuqina okuphezulu okushisayo, ukubekelwa phansi okuphansi okushisayo, kanye nokuphikiswa okuhle kwe-gress, i-silicon Carbide inokusebenzisa okuningi okusetshenziswa ngaphandle kokuqashiswa. Isibonelo, i-Silicon Carbide Powder isetshenziswa kumlohlisi noma isilinda seTurbine yamanzi ngenqubo ekhethekile. Udonga lwangaphakathi lungathuthukisa ukumelana kwalo kokugqoka futhi lwandise impilo yalo yenkonzo izikhathi nge-1 kuye kwezi-2; I-High-gradecturacturgetion ebonakalayo eyenziwe ngayo inokuvikelwa kokushisa okushisayo, usayizi omncane, isisindo esikhanyayo, amandla aphezulu kanye nomphumela omuhle wokusindisa amandla. I-carbide ye-silicon ephansi (equkethe cishe ama-85% we-SIC) yi-deoxidiizer enhle kakhulu. Ingasheshisa isivinini sokwenza insimbi, futhi ilungiselele ukuphathwa kokwakheka kwamakhemikhali futhi kuthuthukise ikhwalithi yensimbi. Ngaphezu kwalokho, i-Silicon Carbide isetshenziswa kabanzi ukwenza izinduku ze-silicon Carbide zezinto zokushisa kagesi.
I-Silicon Carbide inobulukhuni obuphezulu kakhulu, ngobulukhuni be-mohts buka-9.5, okwesibili kuphela edayimane elinzima kunazo zonke emhlabeni (10). Inokuqhutshwa okuhle kakhulu okushisayo, kuyi-semiconductor, futhi ingamelana nokukhala nge-oximation emazingeni okushisa aphezulu.
Ngenxa yezakhiwo zayo zamakhemikhali ezizinzile, ukuqina okuphezulu okushisayo, ukubekelwa phansi okuphansi okushisayo, kanye nokuphikiswa okuhle kwe-gress, i-silicon Carbide inokusebenzisa okuningi okusetshenziswa ngaphandle kokuqashiswa. Isibonelo, i-Silicon Carbide Powder isetshenziswa kumlohlisi noma isilinda seTurbine yamanzi ngenqubo ekhethekile. Udonga lwangaphakathi lungakhulisa ukumelana kwalo kokugqoka futhi lunwebe impilo yalo yenkonzo izikhathi nge-1 kuye kwezi-2; Izinto ezibonakalayo ezenziwe ngazo zinokumelana nokushisa okushisayo, usayizi omncane, isisindo esikhanyayo, amandla aphezulu kanye nomphumela omuhle wokusindisa amandla. I-carbide ye-silicon ephansi (equkethe cishe ama-85% we-SIC) yi-deoxidiizer enhle kakhulu. Ingasheshisa isivinini sokwenza insimbi, futhi ilungiselele ukuphathwa kokwakheka kwamakhemikhali futhi kuthuthukise ikhwalithi yensimbi. Ngaphezu kwalokho, i-Silicon Carbide isetshenziswa kabanzi ukwenza izinduku ze-silicon Carbide zezinto zokushisa kagesi.
I-Silicon Carbide Grit Eminyezwe | |
Usayizi we-mesh | Isilinganiso sobukhulu bezinhlayiyana(incane inombolo ye-mesh, i-coarser grit) |
I-8mesh | 45% 8 mesh (2.3 mm) noma mkhulu |
I-10mesh | 45% 10 mesh (2.0 mm) noma mkhulu |
I-12mesh | I-45% 12 Mesh (1.7 mm) noma inkulu |
14Mesh | 45% 14 mesh (1.4 mm) noma mkhulu |
I-16mesh | 45% 16 Mesh (1.2 Mm) noma Mkhulu |
I-20mesh | I-70% 20 Mesh (0.85 mm) noma inkulu |
I-22mesh | I-45% 20 Mesh (0.85 mm) noma inkulu |
I-24mesh | I-45% 25 mesh (0.7 mm) noma inkulu |
I-30mesh | 45% 30 mesh (0.56 mm) noma omkhulu |
I-36mesh | I-45% 35 mesh (0.48 mm) noma inkulu |
I-40mesh | I-45% 40 Mesh (0.42 mm) noma inkulu |
I-46mesh | I-40% 45 mesh (0.35 mm) noma inkulu |
I-54mesh | 40% 50 mesh (0.33 mm) noma mkhulu |
I-60mesh | I-40% 60 Mesh (0.25 mm) noma inkulu |
I-70mesh | I-40% 70 mesh (0.21 mm) noma inkulu |
I-80mesh | I-40% 80 Mesh (0.17 mm) noma inkulu |
90mesh | 40% 100 mesh (0.15 mm) noma mkhulu |
I-100mesh | I-40% 120 mesh (0.12 mm) noma inkulu |
I-120mesh | 40% 140 mesh (0.10 mm) noma mkhulu |
I-150mesh | I-40% 200 Mesh (0.08 mm) noma inkulu |
I-180mesh | I-40% 230 mesh (0.06 mm) noma inkulu |
220mesh | I-40% 270 mesh (0.046 mm) noma inkulu |
I-240mesh | I-38% 325 mesh (0.037 mm) noma inkulu |
I-280mesh | Median: 33.0-36.0 micron |
I-320mesh | Median: 26.3-29.2 Micron |
I-360mesh | Median: 20.1-23.1 Micron |
I-400mesh | Median: 15.5-17.5 micron |
I-500mesh | Median: 11.3-13.3 Micron |
I-600mesh | Median: 8.0-10.0 micron |
I-800mesh | Median: 5.3-7.3 Micron |
I-1000mesh | Median: 3.7-5.3 micron |
I-1200mesh | Median: 2.6-3.6 Micron |
PIgama le-roduct | Izakhiwo ezijwayelekile zomzimba | Ukuhlaziywa kwamakhemikhali okuba namandla | |||||||
I-Silicon Carbide | Umbala | Ukwakheka okusanhlamvu | Okuqukethwe kazibuthe | Ubunzima | Amandla adonsela phansi athile | Site | 98.58% | Fe | 0.11% |
-Mnyama | -Ngularle | 0.2 - 0.5% | 9.5 Mohs | 3.2 | C | 0.05% | Al | 0.02% | |
Si | 0.80% | CaO | 0.03% | ||||||
Sio2 | 0.30% | Imoto | 0.05% |