I-Junda Silicon Carbide Grit iyimithombo yezindaba eqhuma kanzima etholakalayo. Lo mkhiqizo wekhwalithi ephezulu ukhiqizwa ngendlela eyi-blocky, eyi-angular okusanhlamvu. Le midiya izophuka ngokuqhubekayo okuholela emiphethweni ebukhali, ehlabayo. Ukuqina kwe-Silicon Carbide Grit kuvumela izikhathi ezimfushane zokuqhuma uma kuqhathaniswa nemidiya ethambile.
Ngenxa yezakhiwo zayo zamakhemikhali ezizinzile, izinga eliphezulu le-thermal conductivity, i-coefficient ephansi yokwandisa ukushisa okushisayo, nokumelana okuhle nokugqokwa, i-silicon carbide inezinye izinto eziningi ezisetshenziswayo ngaphandle kokusetshenziswa njengama-abrasives. Isibonelo, i-silicon carbide powder isetshenziswa ku-impeller noma isilinda se-turbine yamanzi ngenqubo ekhethekile. Udonga lwangaphakathi lungathuthukisa ukumelana kwalo nokugqoka futhi lwandise impilo yalo yesevisi ngo-1 izikhathi ezingu-2; i-high-grade refractory material eyenziwe ngayo inokumelana nokushaqeka kokushisa, usayizi omncane, isisindo esilula, amandla aphezulu kanye nomphumela omuhle wokonga amandla. I-silicon carbide yezinga eliphansi (equkethe cishe u-85% we-SiC) iyi-deoxidizer enhle kakhulu. Ingakwazi ukusheshisa isivinini sokwenza insimbi, futhi yenze lula ukulawula ukwakheka kwamakhemikhali futhi ithuthukise ikhwalithi yensimbi. Ngaphezu kwalokho, i-silicon carbide nayo isetshenziswa kabanzi ukwenza izinti ze-silicon carbide zezinto zokushisa zikagesi.
I-silicon carbide inobunzima obuphakeme kakhulu, nobulukhuni be-Mohs obungu-9.5, okwesibili ngemuva kwedayimane elinzima kakhulu emhlabeni (10). Ine-thermal conductivity enhle kakhulu, iyi-semiconductor, futhi ingamelana ne-oxidation emazingeni okushisa aphezulu.
Ngenxa yezakhiwo zayo zamakhemikhali ezizinzile, izinga eliphezulu le-thermal conductivity, i-coefficient ephansi yokwandisa ukushisa okushisayo, nokumelana okuhle nokugqokwa, i-silicon carbide inezinye izinto eziningi ezisetshenziswayo ngaphandle kokusetshenziswa njengama-abrasives. Isibonelo, i-silicon carbide powder isetshenziswa ku-impeller noma isilinda se-turbine yamanzi ngenqubo ekhethekile. Udonga lwangaphakathi lungakhuphula ukumelana nokugqoka futhi lukhulise impilo yalo yesevisi ngo-1 izikhathi ezingu-2; impahla ephikisayo eyenziwe ngayo inokumelana nokushaqeka kokushisa, usayizi omncane, isisindo esilula, amandla aphezulu kanye nomphumela omuhle wokonga amandla. I-silicon carbide yezinga eliphansi (equkethe cishe u-85% we-SiC) iyi-deoxidizer enhle kakhulu. Ingakwazi ukusheshisa isivinini sokwenza insimbi, futhi yenze lula ukulawula ukwakheka kwamakhemikhali futhi ithuthukise ikhwalithi yensimbi. Ngaphezu kwalokho, i-silicon carbide nayo isetshenziswa kabanzi ukwenza izinti ze-silicon carbide zezinto zokushisa zikagesi.
I-Silicon Carbide Grit Imininingwane | |
Usayizi We-Mesh | Usayizi Wezinhlayiyana Omaphakathi(inombolo yemeshi encane, igridi ibe mahholo) |
8 Mesh | 45% 8 mesh (2.3 mm) noma ngaphezulu |
10Mesh | 45% 10 mesh (2.0 mm) noma ngaphezulu |
12Mesh | 45% 12 mesh (1.7 mm) noma ngaphezulu |
14 Mesh | 45% 14 mesh (1.4 mm) noma ngaphezulu |
16 Mesh | 45% 16 mesh (1.2 mm) noma ngaphezulu |
20 Mesh | 70% 20 mesh (0.85 mm) noma ngaphezulu |
22 Mesh | 45% 20 mesh (0.85 mm) noma ngaphezulu |
24 Mesh | 45% 25 mesh (0.7 mm) noma ngaphezulu |
30 Mesh | 45% 30 mesh (0.56 mm) noma ngaphezulu |
36 Mesh | 45% 35 mesh (0.48 mm) noma ngaphezulu |
40 Mesh | 45% 40 mesh (0.42 mm) noma ngaphezulu |
46 Mesh | 40% 45 mesh (0.35 mm) noma ngaphezulu |
54 Mesh | 40% 50 mesh (0.33 mm) noma ngaphezulu |
60 Mesh | 40% 60 anezikhala (0.25 mm) noma ngaphezulu |
70 Mesh | 40% 70 mesh (0.21 mm) noma ngaphezulu |
80 Mesh | 40% 80 mesh (0.17 mm) noma ngaphezulu |
90 Mesh | 40% 100 mesh (0.15 mm) noma ngaphezulu |
100Mesh | 40% 120 mesh (0.12 mm) noma ngaphezulu |
120Mesh | 40% 140 mesh (0.10 mm) noma ngaphezulu |
150Mesh | 40% 200 mesh (0.08 mm) noma ngaphezulu |
180Mesh | 40% 230 mesh (0.06 mm) noma ngaphezulu |
220Mesh | 40% 270 mesh (0.046 mm) noma ngaphezulu |
240Mesh | 38% 325 mesh (0.037 mm) noma ngaphezulu |
280Mesh | I-Median: 33.0-36.0 micron |
320Mesh | Isilinganiso: 26.3-29.2 micron |
360Mesh | I-Median: 20.1-23.1 micron |
400Mesh | I-Median: 15.5-17.5 micron |
500Mesh | I-Median: 11.3-13.3 micron |
600Mesh | I-Median: 8.0-10.0 micron |
800Mesh | I-Median: 5.3-7.3 micron |
1000Mesh | I-Median: 3.7-5.3 micron |
1200Mesh | I-Median: 2.6-3.6 micron |
Pigama lomzila | Izici Zomzimba Ezijwayelekile | I-Proximate Chemical Analysis | |||||||
I-silicon carbide | Umbala | Umumo Wokusanhlamvu | Okuqukethwe Magnetic | Ukuqina | I-Gravity ethize | I-SiC | 98.58 % | Fe | 0.11 % |
Mnyama | I-Angular | 0.2 - 0.5 % | 9.5 Moh | 3.2 | C | 0.05 % | Al | 0.02 % | |
Si | 0.80 % | I-CaO | 0.03 % | ||||||
SiO2 | 0.30 % | MgO | 0.05 % |